传统直流无刷电机（BLDCM）驱动器以硅晶体管作为功率器件，工作频率低、开关损耗大，不适用于高速应用场合。宽禁带半导体氮化镓（GaN）晶体管，具有开关速度快、导通电阻小等优势，是高速驱动器的理想选择之一。基于GaN器件，设计了一款20 000 r/min转速的高速BLDCM驱动器。首先介绍了BLDCM驱动的工作原理，然后分析了GaN器件晶体管栅极驱动电阻值的计算过程，选取Si8273作为GaN晶体管GS61008P的驱动芯片，利用霍尔信号配合数字控制器软件得到换相脉冲，以完成高速驱动器的软硬件设计。验结果表明,GaN方案显著减小了驱动器体积，提高了响应速度。

Traditional brushless DC motor (BLDCM) drivers which utilize silicon devices, due to the low working frequency and high switch loss, cannot fulfill high-speed applications. Wide-band-gap GaN devices with low turn-on resistance and high switch frequency are the optimum choice for high-speed drivers. A BLDCM driver based on GaN devices is designed. The motor rotation speed of 20 000 r/min is achieved. The BLDCM driver theory is introduced. The GaN devices′ gate-drive resistance is calculated. Choosing gate-drive chip Si8273 to drive GS61008P and using Hall signal to obtain commutation time, the design of high-speed driver is completed. Experiment results show that GaN devices improve the controller′s response significantly and the size of the controller is also comparatively smaller.