【目的】BUCK电路在新能源汽车车载电源系统、工业电机驱动等场景中应用广泛。在双馈直线电机(DFLM)的应用与实现中，需要在车载电池包与电机直流母线电容间设计一BUCK电路进行电平转换，以实现其无接触馈电功能。然而，该BUCK电路的振铃给直流母线电容带来了高频噪声，影响了DFLM动子侧电流控制。针对此问题，本文提出了一种振铃仿真方法与抑制策略，旨在抑制高频振铃，为动子侧电流控制提供基础。【方法】首先，对带有开尔文源极碳化硅金属-氧化物-半导体场效应管(SiC MOSFET)在BUCK电路拓扑中的高频振铃原因进行分析；然后，通过试验数据拟合获得各寄生参数的具体取值；最后，针对振铃抑制目标，通过仿真对RCD缓冲电路的选型进行优化设计，减少对不同选型进行试验的时间成本。【结果】通过参数辨识获得的系统仿真结果误差比经验选值造成的误差降低了约20%。根据所提选值方法，关断振铃过冲电压减小了83.0%，开通振铃过冲电压减小了83.6%。【结论】本文提出了一种优化缓冲电路选型的方法。仿真和试验结果表明，采用该方法能够通过少量试验数据准确获得电路寄生参数，并针对SiC MOSFET开关振铃抑制进行满足需求的元件选型，使尖峰电压和器件开关速度处于系统优化的最佳区间。

[Objective] BUCK circuits are widely used in new energy vehicle on-board power systems, industrial motor drives and other scenarios. In the application and realization of doubly-fed linear motor (DFLM), it is necessary to design a BUCK circuit for level shifting between the on-board battery pack and the DC bus capacitor of the motor to realize its contactless feeding function. However, the ringing of this BUCK circuit introduces high-frequency noise to the DC bus capacitor, which affects the current control of the driver side of the DFLM. To address this problem, this paper proposes a ringing simulation method and suppression strategy, aiming at suppressing high-frequency ringing to provide a basis for the current control of the driver side. [Methods] Firstly, the causes of high-frequency ringing of silicon carbide metal-oxide-silicon field effect transistor (SiC MOSFET) with Kelvin source in a BUCK circuit topology were analyzed. Then, specific values of each parasitic parameter were obtained by fitting the experimental data. Finally, for the ringing suppression objective, the selection of RCD snubber circuit was optimally designed through simulation to reduce the time cost of experimenting with different selections. [Results] The error of the system simulation results obtained through parameter identification was reduced by about 20% compared to the error caused by empirical value selection. According to the proposed value selection method, the turn-off ringing overshoot voltage was reduced by 83.0% and the turn-on ringing overshoot voltage was reduced by 83.6%. [Conclusion] In this paper, a method to optimize the snubber circuit selection is proposed. Simulation and experimental results show that this method can accurately obtain the circuit parasitic parameters through a small amount of experimental data, and select components to meet the requirements for SiC MOSFET switch ringing suppression, so that the spike voltage and device switching speed are operated in the system optimal range.

上海市“科技创新行动计划”社会发展科技攻关项目(23DZ1203300)