In order to accelerate the practical application of the all silicon carbide power module, the switching process of the all silicon carbide power module was analyzed. Parameters including voltage and current change rates, grid voltage coupling and switching loss were investigated. Besides, the IGBT module and the all silicon carbide power module were compared. On the basis of the doublepulse test of the all silicon carbide power module, the switching transient characteristics and the switching loss under different voltage and current levels were studied. The voltage and current stress values were obtained by extracting the test parameters. The results provided effective reference for the practical application of the all silicon carbide power module.