[Objective] Power devices composed of first- and second-generation semiconductor materials have reached their performance limits, making them unsuitable for more complex circuit topologies. Silicon carbide (SiC), the third-generation semiconductor material, has gradually become a research focus, and corresponding SiC devices are now at the forefront of research. Compared to traditional silicon (Si)-based devices, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) offer superior characteristics and are widely used in high-voltage, high-frequency, and high-power-density applications. However, due to the limited current-carrying capacity of a single device, multiple devices are often used in parallel. Immature manufacturing processes and asymmetric circuit layouts cause differences in device parameters and external circuit parameters, leading to unbalanced current issues. To address this problem, this paper proposes a current-sharing control strategy. [Methods] This paper first analyzed and summarized the factors affecting parallel current sharing and determined the influence of each parameter. Based on the devices’ switching characteristics, theoretical formulas were derived to summarize the current variation patterns. Then, a corresponding current detection circuit was designed to accurately capture current differences. Finally, a current-sharing control strategy based on adjusting multi-level driving resistance was proposed to gradually regulate unbalanced currents. [Results] Simulation results validated the effectiveness of the proposed control strategy, significantly reducing current imbalance. [Conclusion] The results show that by setting an appropriate driving resistance, the proposed control strategy can effectively achieve current sharing in dual-device parallel configurations.